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Freescale Semiconductor Technical Data
Document Number: MD8IC970N Rev. 0, 2/2011
RF LDMOS Wideband Integrated Power Amplifier
The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. * Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency 850 MHz 900 MHz 940 MHz Gps (dB) 30.6 31.9 32.6 PAE (%) 40.1 42.4 42.1 IMD (dBc) --30.5 --31.0 --31.3
MD8IC970NR1
850-940 MHz, 35 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point 79 Watts CW Features * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * On--Chip Prematching. On--Chip Stabilization. * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
RFin2A RFout1A/VD1A VG1A RFin1A VG2A Quiescent Current Temperature Compensation (1) RFout2A/VD2A
CASE 1866-02 TO-270 WBL-16 PLASTIC
RFin2B RFout1B/VD1B VG2B RFin1B VG1B Quiescent Current Temperature Compensation (1) RFout2B/VD2B
RFin2A RFout1A/VD1A GND GND VG1A RFin1A VG2A VG2B RFin1B VG1B GND GND RFout1B/VD1B RFin2B
1 2 3 4 5 6 7 8 9 10 11 12 13 14 (Top View)
16
RFout2A/ VD2A
15
RFout2B/ VD2B
Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2011. All rights reserved.
MD8IC970NR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value --0.5, +70 --0.5, +10 32, +0 --65 to +150 150 225 30 Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Final Application Thermal Resistance, Junction to Case Case Temperature 80C, 35 W CW Stage 1, 28 Vdc, IDQ1(A+B) = 60 mA, f1 = 939.9 MHz, f2 = 940.1 MHz Stage 2, 25 Vdc, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz RJC 2.9 0.6 C/W Symbol Value (2,3) Unit
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1A (Minimum) A (Minimum) I (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 60 mAdc) Fixture Gate Quiescent Voltage (VDD1 = 28 Vdc, IDQ1(A+B) = 60 mAdc, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 -- 9.0 2.0 3.1 10.0 2.7 -- 11.0 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Side A and Side B are tied together for this measurement. (continued)
MD8IC970NR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 320 Adc) Gate Quiescent Voltage (VDS = 25 Vdc, IDQ2(A+B) = 550 mAdc) Fixture Gate Quiescent Voltage (VDD2 = 25 Vdc, IDQ2(A+B) = 550 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.2 Adc) VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 7.6 0.1 2.0 3.1 8.6 0.48 2.7 -- 9.6 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 35 W Avg., IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz Power Gain Power Added Efficiency Intermodulation Distortion Typical Broadband Performance IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA
(1) (In
Gps PAE IMD
31.5 40.5 --
32.6 42.1 --31.3
36.5 -- --29.0
dB % dB
Freescale Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 35 W Avg., Gps (dB) 30.6 31.9 32.6 PAE (%) 40.1 42.4 42.1 IMD (dBc) --30.5 --31.0 --31.3
Frequency 850 MHz 900 MHz 940 MHz
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, 850--940 MHz Bandwidth Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 71 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature with 8.25 k Gate Feed Resistors (--30 to 85C) (3) Gain Flatness in 90 MHz Bandwidth @ Pout = 35 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) Stage 1 Stage 2 Symbol P1dB IMDsym Min -- -- Typ 79 22 Max -- -- Unit W MHz
VBWres IQT GF G P1dB
-- -- -- -- -- --
50 5.03 4.61 1.2 0.03 0.005
-- -- -- -- -- --
MHz % dB dB/C dB/C
1. Side A and Side B are tied together for this measurement. 2. Part internally matched both on input and output. 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
MD8IC970NR1 RF Device Data Freescale Semiconductor 3
VGG2A
VDD1A C1
R2
L1 C7 C13 L3 R4 C17 C19 R6 R7 C18 C14 C8 L4 R5 C20 CUT OUT AREA C21 C23 C25 C22 C26 C24 C28 C27
L5
R8 C35 VDD2A
VGG1A C9 C5 C3 Z1 R1 C4
C11 C15 C16 C12 C2 C6 VGG1B C10
C29 C31 C32 C30
C33 Z2 C34 VDD2B C36 R10
VGG2B
VDD1B R3
L2
L6
R9
MD8IC970N Rev. 1
Figure 3. MD8IC970NR1 Test Circuit Component Layout
Table 6. MD8IC970NR1 Test Circuit Component Designations and Values
Part C1, C2, C35, C36 C3, C4, C9, C10 C5, C6 C7, C8, C27, C28, C33, C34 C11, C12 C13, C14 C15, C16, C19, C20 C17, C18 C21, C22 C23, C24, C25, C26 C29. C30, C31, C32 L1, L2, L5, L6 L3, L4 R1 R2, R3, R8, R9 R4, R5, R6, R7 R10 Z1, Z2 PCB Description 10 F, 50 V Chip Capacitors 1 F, 50 V Chip Capacitors 3.3 pF Chip Capacitors 39 pF Chip Capacitors 47 pF Chip Capacitors 4.7 pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 5.6 pF Chip Capacitors 15 pF Chip Capacitors 4.7 pF Chip Capacitors 2.7 pF Chip Capacitors 5.0 nH 2 Turn Inductors 2.8 nH Chip Inductors 51 , 1/8 W Chip Resistor 10 , 1/8 W Chip Resistors 8.25 k, 1/10 W Chip Resistors 50 , 10 W SM Chip Power Resistor 900 MHz Band, 90, 3 dB Chip Hybrid Couplers 0.030, r = 3.66 Part Number GRM55DR61H106KA88L GRM31MR71H105KA88L ATC600F3R3BT250XT ATC600F390JT250XT ATC600S470JT250XT ATC600S4R7JT250XT GRM188R71C104K01D ATC600S5R6JT250XT ATC600F150JT250XT ATC600F4R7BT250XT ATC600F2R7BT250XT A02TKLC 0805CS--020XJLC SG73P2ATTD51R0F RK73H2ATTD10R0F RK73H1JTTD8251F 81A7031--50--5F GSC362--HYB0900 RO4350B Manufacturer Murata Murata ATC ATC ATC ATC Murata ATC ATC ATC ATC Coilcraft Coilcraft KOA Speer KOA Speer KOA Speer Florida RF Labs Soshin Rogers
MD8IC970NR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 0 --10 --20 --30 --40 --50 --60 IMD, INTERMODULATION DISTORTION (dBc) PAE, POWER ADDED EFFICIENCY (%) 36 35 34 Gps, POWER GAIN (dB) 33 32 31 30 29 28 27 26 820 IMD Gps PAE 44 42 40 38 36 --27 VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA --28 IDQ2(A+B) = 550 mA, Pout = 35 W (Avg.) --29 200 kHz Tone Spacing --30 --31 --32 840 860 880 900 920 940 960 980 f, FREQUENCY (MHz)
Figure 4. Two-Tone Broadband Performance @ Pout = 35 Watts Avg.
--10 --20 --30 --40 IM7--U --50 --60 IM7--L VDD1 = 28 Vdc, VDD2 = 25 Vdc, Pout = 71 W (PEP) IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 900 MHz IM3--U IM3--L IM5--U IM5--L
IMD, INTERMODULATION DISTORTION (dBc)
1
10 TWO--TONE SPACING (MHz)
100
Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing
35 34 Gps, POWER GAIN (dB) 33 32 31 30 29 60 50 40 30 20 10 0 20 30 40 50 60 Pout, OUTPUT POWER (WATTS)
VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz Gps PAE IMD
10
Figure 6. Power Gain, Power Added Efficiency and Intermodulation Distortion Products versus Average Output Power MD8IC970NR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
36 34 Gps, POWER GAIN (dB) 32 30 28 26 24 1 10 Pout, OUTPUT POWER (WATTS) AVG. PAE IMD, INTERMODULATION DISTORTION (dBc) VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA, 200 kHz Tone Spacing 900 MHz Gps 850 MHz IMD 940 MHz 900 MHz 850 MHz 30 20 10 0 100 940 MHz 60 PAE, POWER ADDED EFFICIENCY (%) 50 40 --10 --20 --30 --40 --50 --60 --70
Figure 7. Power Gain, Power Added Efficiency and Intermodulation Distortion Products versus Output Power
36 34 32 GAIN (dB) 30 28 26 24 700 VDD1 = 28 Vdc, VDD2 = 25 Vdc Pin = 0 dBm, IDQ1(A+B) = 60 mA IDQ2(A+B) = 550 mA Gain
750
800
850
900
950
1000
1050
1100
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MD8IC970NR1 6 RF Device Data Freescale Semiconductor
VDD1 = 28 Vdc, IDQ1(A) = 30 mA f MHz 820 840 860 880 900 920 940 960 980 Zin Zin 18.4 -- j13.0 18.8 -- j12.7 19.1 -- j12.9 19.1 -- j13.2 18.7 -- j13.6 18.0 -- j13.9 17.2 -- j14.2 16.1 -- j14.3 14.6 -- j14.3 Zload 11.3 + j20.0 11.7 + j21.9 12.1 + j23.4 12.5 + j24.5 12.7 + j25.1 12.5 + j25.6 11.8 + j26.0 10.9 + j26.6 9.6 + j27.4 Zin f MHz 330 350 370 390 410 430 450 Zin 31.2 -- j21.5 33.6 -- j18.7 35.8 -- j18.8 36.4 -- j19.6 37.0 -- j20.1 37.7 -- j21.7 36.2 -- j24.8 Zload 16.2 + j57.8 24.2 + j59.6 29.8 + j55.6 29.0 + j52.8 27.8 + j54.7 30.2 + j58.5 38.8 + j59.1
= Device input impedance as measured from gate to ground.
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Zload = Test circuit impedance as measured from drain to ground.
f MHz 120 130 140 150 160 170 180 190 200 Zin
Zin 42.7 -- j27.4 40.0 -- j22.5 40.2 -- j16.0 43.8 -- j13.3 47.8 -- j10.0 51.5 -- j10.0 54.9 -- j10.6 58.2 -- j12.9 59.6 -- j16.9
Zload 47.3 + j80.0 61.4 + j93.3 84.0 + j104.2 114.5 + j107.2 147.2 + j98.5 179.4 + j81.3 215.9 + j53.3 256.6 -- j7.6 233.3 -- j109.9
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 9. Series Equivalent Input and Load Impedance -- Stage 1
NOTE: Measurement made on a per side basis.
MD8IC970NR1 RF Device Data Freescale Semiconductor 7
VDD2 = 25 Vdc, IDQ2(A) = 275 mA, Pout = 17.5 Watts Avg. f MHz 820 840 860 880 900 920 940 960 980 Zin Zin 9.49 + j10.2 10.3 + j10.3 11.2 + j10.2 12.2 + j9.89 13.1 + j9.34 14.0 + j8.53 14.6 + j7.51 15.1 + j6.28 15.2 + j4.87 Zload 3.19 + j1.99 3.29 + j2.11 3.39 + j2.18 3.45 + j2.20 3.46 + j2.16 3.40 + j2.08 3.24 + j2.00 2.98 + j1.96 2.66 + j1.99 Zin f MHz 330 350 370 390 410 430 450 Zin 5.78 + j3.02 5.73 + j3.40 5.66 + j3.89 5.63 + j4.34 5.60 + j4.75 5.53 + j5.06 5.38 + j5.32 Zload 5.53 + j1.53 6.27 + j1.77 6.95 + j1.55 7.18 + j0.90 6.67 + j0.22 5.61 + j0.05 4.45 + j0.57
= Device input impedance as measured from gate to ground.
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Zload = Test circuit impedance as measured from drain to ground.
f MHz 120 130 140 150 160 170 180 190 200 Zin
Zin 5.47 -- j0.60 5.46 -- j0.36 5.47 -- j0.13 5.47 + j0.11 5.46 + j0.35 5.43 + j0.56 5.42 + j0.75 5.49 + j0.93 5.42 + j1.05
Zload 5.74 + j2.70 6.36 + j1.97 6.21 + j1.37 5.95 + j1.37 6.09 + j1.63 6.59 + j1.58 6.70 + j0.92 5.73 + j0.82 4.83 + j2.57
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 10. Series Equivalent Input and Load Impedance -- Stage 2
NOTE: Measurement made on a per side basis.
MD8IC970NR1 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS -- STAGE 2
VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Pout f MHz 850 940 Zsource 10.9 + j10.2 14.6 + j7.51 Zload (1) 3.34 + j2.16 3.24 + j2.00 P1dB dBm 47.1 46.8 W 51 48 f MHz 850 940 Zsource 10.9 + j10.2 14.6 + j7.51 Zload (1) 3.36 + j3.93 2.95 + j3.66 VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Eff. P1dB % 66.2 62.1
(1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
(1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Z
source
Z
load
Figure 11. Single Side Load Pull Performance -- Maximum P1dB Tuning
Figure 12. Single Side Load Pull Performance -- Maximum Efficiency Tuning
VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Pout f MHz Zsource Zload (1) P1dB dBm W 48 f MHz 430
VDD2 = 25 Vdc, IDQ2 = 300 mA, CW Max Eff. Zsource 5.53 + j5.06 Zload
(1)
P1dB % 66.1
430 5.53 + j5.06 5.61 + j0.05 46.8 (1) Load impedance for optimum P1dB power.
5.96 + j2.65
(1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Z
source
Z
load
Figure 13. Single Side Load Pull Performance -- Maximum P1dB Tuning
Figure 14. Single Side Load Pull Performance -- Maximum Efficiency Tuning
MD8IC970NR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MD8IC970NR1 10 RF Device Data Freescale Semiconductor
MD8IC970NR1 RF Device Data Freescale Semiconductor 11
MD8IC970NR1 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Feb. 2011 * Initial Release of Data Sheet Description
MD8IC970NR1 RF Device Data Freescale Semiconductor 13
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MD8IC970NR1
Rev. 14 0, 2/2011 Document Number: MD8IC970N
RF Device Data Freescale Semiconductor

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